EPC9018: 35A, H-Bridge, 0 ~ 30V

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2” x 1.5” and contains two eGaN FETs in a half-bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2015/23 and EPC2001/21 eGaN FETs, please refer to the datasheets available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quickstart guide.