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Designs (29)

29 Results - Page 1/3 |< < 1 2 3
Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9060: 25A, 40V, Half H-Bridge Driver Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9001: 15A @ 0 ~ 40V, Half Bridge Manufacturer: EPC

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9054: 1A, Wireless Power Amp, 0 ~ 40V, ~ 60V, ~ 80V Manufacturer: EPC

The EPC9054 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9066: 2.7A Half H-Bridge, 0 ~ 40V Manufacturer: EPC

The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) STK554U392AGEVB: 15A, 0 ~ 450V, 3-Ph Half Bridges Manufacturer: onsemi

Evaluation board for the "Inverter Power H-IC" highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP module.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9203: 20A, 60V, Half H-Bridge Driver Manufacturer: EPC

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9013: 35A, 100V, Half Bridge Manufacturer: EPC

The EPC9013 development board features the 100 VEPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9014: 4A, Half H-Bridge, 0 ~ 200V Manufacturer: EPC

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9018: 35A, H-Bridge, 0 ~ 30V Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9005C: 7A, 40V, Half H-Bridge Driver Manufacturer: EPC

The EPC9005C development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives

29 Results - Page 1/3 |< < 1 2 3
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